TY  - JOUR
AU  - Wirths, Stephan
AU  - Stange, Daniela
AU  - Pampillon, Maria
AU  - Tiedemann, Andreas
AU  - Mussler, Gregor
AU  - Fox, Alfred
AU  - Breuer, Uwe
AU  - Baert, Bruno
AU  - San Andrés, Enrique
AU  - Nguyen, Ngoc D.
AU  - Hartmann, Jean-Michel
AU  - Ikonic, Zoran
AU  - Mantl, Siegfried
AU  - Buca, Dan Mihai
TI  - High- k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
JO  - ACS applied materials & interfaces
VL  - 7
IS  - 1
SN  - 1944-8252
CY  - Washington, DC
PB  - Soc.
M1  - FZJ-2015-02297
SP  - 62 - 67
PY  - 2015
AB  - We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al2O3, 5 nm HfO2, or 1 nmAl2O3/4 nm HfO2, on strained Ge and strained Ge0.94Sn0.06. Experimental capacitance–voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000348085200008
C6  - pmid:25531887
DO  - DOI:10.1021/am5075248
UR  - https://juser.fz-juelich.de/record/189055
ER  -