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@ARTICLE{Wirths:189055,
      author       = {Wirths, Stephan and Stange, Daniela and Pampillon, Maria
                      and Tiedemann, Andreas and Mussler, Gregor and Fox, Alfred
                      and Breuer, Uwe and Baert, Bruno and San Andrés, Enrique
                      and Nguyen, Ngoc D. and Hartmann, Jean-Michel and Ikonic,
                      Zoran and Mantl, Siegfried and Buca, Dan Mihai},
      title        = {{H}igh- k {G}ate {S}tacks on {L}ow {B}andgap {T}ensile
                      {S}trained {G}e and {G}e{S}n {A}lloys for {F}ield-{E}ffect
                      {T}ransistors},
      journal      = {ACS applied materials $\&$ interfaces},
      volume       = {7},
      number       = {1},
      issn         = {1944-8252},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2015-02297},
      pages        = {62 - 67},
      year         = {2015},
      abstract     = {We present the epitaxial growth of Ge and Ge0.94Sn0.06
                      layers with $1.4\%$ and $0.4\%$ tensile strain,
                      respectively, by reduced pressure chemical vapor deposition
                      on relaxed GeSn buffers and the formation of high-k/metal
                      gate stacks thereon. Annealing experiments reveal that
                      process temperatures are limited to 350 °C to avoid Sn
                      diffusion. Particular emphasis is placed on the electrical
                      characterization of various high-k dielectrics, as 5 nm
                      Al2O3, 5 nm HfO2, or 1 nmAl2O3/4 nm HfO2, on strained Ge and
                      strained Ge0.94Sn0.06. Experimental capacitance–voltage
                      characteristics are presented and the effect of the small
                      bandgap, like strong response of minority carriers at
                      applied field, are discussed via simulations.},
      cin          = {PGI-9 / JARA-FIT / ZEA-3},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)ZEA-3-20090406},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000348085200008},
      pubmed       = {pmid:25531887},
      doi          = {10.1021/am5075248},
      url          = {https://juser.fz-juelich.de/record/189055},
}