Gast ::
| Hauptseite > Publikationsdatenbank > High- k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors > print |
| Hauptseite > Publikationsdatenbank > High- k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors > print |
| 001 | 189055 | ||
| 005 | 20210129215308.0 | ||
| 024 | 7 | _ | |a 10.1021/am5075248 |2 doi |
| 024 | 7 | _ | |a 1944-8244 |2 ISSN |
| 024 | 7 | _ | |a 1944-8252 |2 ISSN |
| 024 | 7 | _ | |a WOS:000348085200008 |2 WOS |
| 024 | 7 | _ | |a altmetric:3797929 |2 altmetric |
| 024 | 7 | _ | |a pmid:25531887 |2 pmid |
| 037 | _ | _ | |a FZJ-2015-02297 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Wirths, Stephan |0 P:(DE-Juel1)138778 |b 0 |
| 245 | _ | _ | |a High- k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors |
| 260 | _ | _ | |a Washington, DC |c 2015 |b Soc. |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1433238631_14912 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al2O3, 5 nm HfO2, or 1 nmAl2O3/4 nm HfO2, on strained Ge and strained Ge0.94Sn0.06. Experimental capacitance–voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations. |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |x 0 |f POF III |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Stange, Daniela |0 P:(DE-Juel1)161180 |b 1 |
| 700 | 1 | _ | |a Pampillon, Maria |0 P:(DE-Juel1)159112 |b 2 |
| 700 | 1 | _ | |a Tiedemann, Andreas |0 P:(DE-Juel1)128639 |b 3 |
| 700 | 1 | _ | |a Mussler, Gregor |0 P:(DE-Juel1)128617 |b 4 |
| 700 | 1 | _ | |a Fox, Alfred |0 P:(DE-Juel1)125583 |b 5 |
| 700 | 1 | _ | |a Breuer, Uwe |0 P:(DE-Juel1)133840 |b 6 |
| 700 | 1 | _ | |a Baert, Bruno |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a San Andrés, Enrique |0 P:(DE-HGF)0 |b 8 |
| 700 | 1 | _ | |a Nguyen, Ngoc D. |0 P:(DE-HGF)0 |b 9 |
| 700 | 1 | _ | |a Hartmann, Jean-Michel |0 P:(DE-HGF)0 |b 10 |
| 700 | 1 | _ | |a Ikonic, Zoran |0 P:(DE-HGF)0 |b 11 |
| 700 | 1 | _ | |a Mantl, Siegfried |0 P:(DE-Juel1)128609 |b 12 |
| 700 | 1 | _ | |a Buca, Dan Mihai |0 P:(DE-Juel1)125569 |b 13 |e Corresponding Author |u fzj |
| 773 | _ | _ | |a 10.1021/am5075248 |g Vol. 7, no. 1, p. 62 - 67 |0 PERI:(DE-600)2467494-1 |n 1 |p 62 - 67 |t ACS applied materials & interfaces |v 7 |y 2015 |x 1944-8252 |
| 856 | 4 | _ | |u http://pubs.acs.org/doi/abs/10.1021/am5075248 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/189055/files/ACS%20AMI%20%20strained%20GeSn%20MOScaps%202015.pdf |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/189055/files/ACS%20AMI%20%20strained%20GeSn%20MOScaps%202015.pdf?subformat=pdfa |x pdfa |y Restricted |
| 909 | C | O | |o oai:juser.fz-juelich.de:189055 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)138778 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)161180 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)159112 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-Juel1)128639 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 4 |6 P:(DE-Juel1)128617 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)125583 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 6 |6 P:(DE-Juel1)133840 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 12 |6 P:(DE-Juel1)128609 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 13 |6 P:(DE-Juel1)125569 |
| 913 | 0 | _ | |a DE-HGF |b Schlüsseltechnologien |l Grundlagen für zukünftige Informationstechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2015 |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1160 |2 StatID |b Current Contents - Engineering, Computing and Technology |
| 915 | _ | _ | |a IF >= 5 |0 StatID:(DE-HGF)9905 |2 StatID |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 1 |
| 920 | 1 | _ | |0 I:(DE-Juel1)ZEA-3-20090406 |k ZEA-3 |l Analytik |x 2 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a I:(DE-Juel1)ZEA-3-20090406 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)ZEA-3-20090406 |
| Library | Collection | CLSMajor | CLSMinor | Language | Author |
|---|