%0 Journal Article
%A Di Gaspare, L.
%A Sabbagh, D.
%A De Seta, M.
%A Sodo, A.
%A Wirths, S.
%A Buca, D.
%A Zaumseil, P.
%A Schroeder, T.
%A Capellini, G.
%T Epi-cleaning of Ge/GeSn heterostructures1
%J Journal of applied physics
%V 117
%N 4
%@ 1089-7550
%C Melville, NY
%I American Inst. of Physics
%M FZJ-2015-02298
%P 045306 -
%D 2015
%X We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1%) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100–300 °C range.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000348998200054
%R 10.1063/1.4906616
%U https://juser.fz-juelich.de/record/189056