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000189056 1001_ $$0P:(DE-HGF)0$$aDi Gaspare, L.$$b0$$eCorresponding Author
000189056 245__ $$aEpi-cleaning of Ge/GeSn heterostructures1
000189056 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2015
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000189056 520__ $$aWe demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1%) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100–300 °C range.
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000189056 7001_ $$0P:(DE-HGF)0$$aSabbagh, D.$$b1
000189056 7001_ $$0P:(DE-HGF)0$$aDe Seta, M.$$b2
000189056 7001_ $$0P:(DE-HGF)0$$aSodo, A.$$b3
000189056 7001_ $$0P:(DE-Juel1)138778$$aWirths, S.$$b4
000189056 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b5
000189056 7001_ $$0P:(DE-HGF)0$$aZaumseil, P.$$b6
000189056 7001_ $$0P:(DE-HGF)0$$aSchroeder, T.$$b7
000189056 7001_ $$0P:(DE-HGF)0$$aCapellini, G.$$b8$$eCorresponding Author
000189056 773__ $$0PERI:(DE-600)1476463-5$$a10.1063/1.4906616$$gVol. 117, no. 4, p. 045306 -$$n4$$p045306 -$$tJournal of applied physics$$v117$$x1089-7550$$y2015
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