TY  - JOUR
AU  - Di Gaspare, L.
AU  - Sabbagh, D.
AU  - De Seta, M.
AU  - Sodo, A.
AU  - Wirths, S.
AU  - Buca, D.
AU  - Zaumseil, P.
AU  - Schroeder, T.
AU  - Capellini, G.
TI  - Epi-cleaning of Ge/GeSn heterostructures1
JO  - Journal of applied physics
VL  - 117
IS  - 4
SN  - 1089-7550
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2015-02298
SP  - 045306 -
PY  - 2015
AB  - We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1%) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100–300 °C range.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000348998200054
DO  - DOI:10.1063/1.4906616
UR  - https://juser.fz-juelich.de/record/189056
ER  -