% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{DiGaspare:189056,
author = {Di Gaspare, L. and Sabbagh, D. and De Seta, M. and Sodo, A.
and Wirths, S. and Buca, D. and Zaumseil, P. and Schroeder,
T. and Capellini, G.},
title = {{E}pi-cleaning of {G}e/{G}e{S}n heterostructures1},
journal = {Journal of applied physics},
volume = {117},
number = {4},
issn = {1089-7550},
address = {Melville, NY},
publisher = {American Inst. of Physics},
reportid = {FZJ-2015-02298},
pages = {045306 -},
year = {2015},
abstract = {We demonstrate a very-low temperature cleaning technique
based on atomic hydrogen irradiation for highly $(1\%)$
tensile strained Ge epilayers grown on metastable, partially
strain relaxed GeSn buffer layers. Atomic hydrogen is
obtained by catalytic cracking of hydrogen gas on a hot
tungsten filament in an ultra-high vacuum chamber. X-ray
photoemission spectroscopy, reflection high energy electron
spectroscopy, atomic force microscopy, secondary ion mass
spectroscopy, and micro-Raman showed that an O- and C-free
Ge surface was achieved, while maintaining the same
roughness and strain condition of the as-deposited sample
and without any Sn segregation, at a process temperature in
the 100–300 °C range.},
cin = {PGI-9 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000348998200054},
doi = {10.1063/1.4906616},
url = {https://juser.fz-juelich.de/record/189056},
}