001     189056
005     20210129215308.0
024 7 _ |a 10.1063/1.4906616
|2 doi
024 7 _ |a 0021-8979
|2 ISSN
024 7 _ |a 0148-6349
|2 ISSN
024 7 _ |a 1089-7550
|2 ISSN
024 7 _ |a WOS:000348998200054
|2 WOS
024 7 _ |a 2128/16810
|2 Handle
037 _ _ |a FZJ-2015-02298
041 _ _ |a English
082 _ _ |a 530
100 1 _ |a Di Gaspare, L.
|0 P:(DE-HGF)0
|b 0
|e Corresponding Author
245 _ _ |a Epi-cleaning of Ge/GeSn heterostructures1
260 _ _ |a Melville, NY
|c 2015
|b American Inst. of Physics
336 7 _ |a article
|2 DRIVER
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|b journal
|m journal
|0 PUB:(DE-HGF)16
|s 1428476735_1879
|2 PUB:(DE-HGF)
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a Journal Article
|0 0
|2 EndNote
520 _ _ |a We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1%) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100–300 °C range.
536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
|0 G:(DE-HGF)POF3-521
|c POF3-521
|f POF III
|x 0
588 _ _ |a Dataset connected to CrossRef, juser.fz-juelich.de
700 1 _ |a Sabbagh, D.
|0 P:(DE-HGF)0
|b 1
700 1 _ |a De Seta, M.
|0 P:(DE-HGF)0
|b 2
700 1 _ |a Sodo, A.
|0 P:(DE-HGF)0
|b 3
700 1 _ |a Wirths, S.
|0 P:(DE-Juel1)138778
|b 4
700 1 _ |a Buca, D.
|0 P:(DE-Juel1)125569
|b 5
700 1 _ |a Zaumseil, P.
|0 P:(DE-HGF)0
|b 6
700 1 _ |a Schroeder, T.
|0 P:(DE-HGF)0
|b 7
700 1 _ |a Capellini, G.
|0 P:(DE-HGF)0
|b 8
|e Corresponding Author
773 _ _ |a 10.1063/1.4906616
|g Vol. 117, no. 4, p. 045306 -
|0 PERI:(DE-600)1476463-5
|n 4
|p 045306 -
|t Journal of applied physics
|v 117
|y 2015
|x 1089-7550
856 4 _ |u http://scitation.aip.org/content/aip/journal/jap/117/4/10.1063/1.4906616
856 4 _ |u https://juser.fz-juelich.de/record/189056/files/JAP%202015%20hot%20wire%20Ge%20cleaning.pdf
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/189056/files/JAP%202015%20hot%20wire%20Ge%20cleaning.pdf?subformat=pdfa
|x pdfa
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:189056
|p openaire
|p open_access
|p VDB
|p driver
|p dnbdelivery
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 4
|6 P:(DE-Juel1)138778
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 5
|6 P:(DE-Juel1)125569
913 0 _ |a DE-HGF
|b Schlüsseltechnologien
|l Grundlagen für zukünftige Informationstechnologien
|1 G:(DE-HGF)POF2-420
|0 G:(DE-HGF)POF2-421
|2 G:(DE-HGF)POF2-400
|v Frontiers of charge based Electronics
|x 0
913 1 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-521
|2 G:(DE-HGF)POF3-500
|v Controlling Electron Charge-Based Phenomena
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2015
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0150
|2 StatID
|b Web of Science Core Collection
915 _ _ |a JCR
|0 StatID:(DE-HGF)0100
|2 StatID
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0200
|2 StatID
|b SCOPUS
915 _ _ |a WoS
|0 StatID:(DE-HGF)0110
|2 StatID
|b Science Citation Index
915 _ _ |a WoS
|0 StatID:(DE-HGF)0111
|2 StatID
|b Science Citation Index Expanded
915 _ _ |a IF < 5
|0 StatID:(DE-HGF)9900
|2 StatID
915 _ _ |a OpenAccess
|0 StatID:(DE-HGF)0510
|2 StatID
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1150
|2 StatID
|b Current Contents - Physical, Chemical and Earth Sciences
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0300
|2 StatID
|b Medline
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0199
|2 StatID
|b Thomson Reuters Master Journal List
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l JARA-FIT
|x 1
980 _ _ |a journal
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 1 _ |a FullTexts


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