001 | 189056 | ||
005 | 20210129215308.0 | ||
024 | 7 | _ | |a 10.1063/1.4906616 |2 doi |
024 | 7 | _ | |a 0021-8979 |2 ISSN |
024 | 7 | _ | |a 0148-6349 |2 ISSN |
024 | 7 | _ | |a 1089-7550 |2 ISSN |
024 | 7 | _ | |a WOS:000348998200054 |2 WOS |
024 | 7 | _ | |a 2128/16810 |2 Handle |
037 | _ | _ | |a FZJ-2015-02298 |
041 | _ | _ | |a English |
082 | _ | _ | |a 530 |
100 | 1 | _ | |a Di Gaspare, L. |0 P:(DE-HGF)0 |b 0 |e Corresponding Author |
245 | _ | _ | |a Epi-cleaning of Ge/GeSn heterostructures1 |
260 | _ | _ | |a Melville, NY |c 2015 |b American Inst. of Physics |
336 | 7 | _ | |a article |2 DRIVER |
336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1428476735_1879 |2 PUB:(DE-HGF) |
336 | 7 | _ | |a ARTICLE |2 BibTeX |
336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
520 | _ | _ | |a We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1%) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100–300 °C range. |
536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |f POF III |x 0 |
588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
700 | 1 | _ | |a Sabbagh, D. |0 P:(DE-HGF)0 |b 1 |
700 | 1 | _ | |a De Seta, M. |0 P:(DE-HGF)0 |b 2 |
700 | 1 | _ | |a Sodo, A. |0 P:(DE-HGF)0 |b 3 |
700 | 1 | _ | |a Wirths, S. |0 P:(DE-Juel1)138778 |b 4 |
700 | 1 | _ | |a Buca, D. |0 P:(DE-Juel1)125569 |b 5 |
700 | 1 | _ | |a Zaumseil, P. |0 P:(DE-HGF)0 |b 6 |
700 | 1 | _ | |a Schroeder, T. |0 P:(DE-HGF)0 |b 7 |
700 | 1 | _ | |a Capellini, G. |0 P:(DE-HGF)0 |b 8 |e Corresponding Author |
773 | _ | _ | |a 10.1063/1.4906616 |g Vol. 117, no. 4, p. 045306 - |0 PERI:(DE-600)1476463-5 |n 4 |p 045306 - |t Journal of applied physics |v 117 |y 2015 |x 1089-7550 |
856 | 4 | _ | |u http://scitation.aip.org/content/aip/journal/jap/117/4/10.1063/1.4906616 |
856 | 4 | _ | |u https://juser.fz-juelich.de/record/189056/files/JAP%202015%20hot%20wire%20Ge%20cleaning.pdf |y OpenAccess |
856 | 4 | _ | |u https://juser.fz-juelich.de/record/189056/files/JAP%202015%20hot%20wire%20Ge%20cleaning.pdf?subformat=pdfa |x pdfa |y OpenAccess |
909 | C | O | |o oai:juser.fz-juelich.de:189056 |p openaire |p open_access |p VDB |p driver |p dnbdelivery |
910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 4 |6 P:(DE-Juel1)138778 |
910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)125569 |
913 | 0 | _ | |a DE-HGF |b Schlüsseltechnologien |l Grundlagen für zukünftige Informationstechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |
913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
914 | 1 | _ | |y 2015 |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |
915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
915 | _ | _ | |a IF < 5 |0 StatID:(DE-HGF)9900 |2 StatID |
915 | _ | _ | |a OpenAccess |0 StatID:(DE-HGF)0510 |2 StatID |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
920 | _ | _ | |l yes |
920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 1 |
980 | _ | _ | |a journal |
980 | _ | _ | |a VDB |
980 | _ | _ | |a UNRESTRICTED |
980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
980 | _ | _ | |a I:(DE-82)080009_20140620 |
980 | 1 | _ | |a FullTexts |
Library | Collection | CLSMajor | CLSMinor | Language | Author |
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