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@PHDTHESIS{Ding:189156,
author = {Ding, Kaining},
title = {{N}anostructured {S}i-alloys for silicon solar cells},
volume = {246},
school = {RWTH Aachen},
type = {Dr.},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {FZJ-2015-02356},
isbn = {978-3-95806-024-1},
series = {Schriften des Forschungszentrums Jülich Reihe Energie $\&$
Umwelt / Energy $\&$ Environment},
pages = {210 S.},
year = {2015},
note = {RWTH Aachen, Diss., 2014},
abstract = {In order to initiate further progress in silicon (Si)
photovoltaics, a next-generation of Si solar cell concepts
targeting both high performance and low-cost production
needs to emerge. The objective of this thesis is to
fabricate and characterize Si nanostructures embedded in a
Si alloy matrix and implement these novel materials into Si
based photovoltaic devices. In particular, silicon quantum
dots (Si-QDs) in asilicon carbide (SiC)/Si-rich silicon
oxide (SiO$_{x}$) hetero-superlattice (HSL) structure as top
cell absorber in all-Si tandem solar cells and nanocomposite
microcrystalline silicon oxide ($\mu$c-SiO$_{x}$:H) as
contact layers in silicon heterojunction (SHJ) solar cells
have been investigated. The main focus of the Si-QD absorber
topic lies on the fundamental understanding of the material
properties, whereas for the SHJ solar cell topic,
developments on device level are the key aspect. Due to the
competing nature of charge carrier confinement requiring
high band offset and charge carrier transport demanding low
band offset between Si-QDs and the embedding material, the
choice of different materials for matrix and barrier is
indicated. The novel Si-QD absorber approach based on HSL
with near-stoichiometric SiC (low band offset) as vertical
barrier layer and Si-rich SiO$_{x}$ (high band offset) as
lateral matrix layer is motivated by pointing out the
technical and theoretical diffculties of Si-QD formation in
SiC matrix. After the successful development of laterally
uniform, low rate and fully compatible plasma-enhanced
chemical vapor depositions of high quality SiC and SiO$_{x}$
single layers, the processes were transfered into an
automatic deposition sequence, which allows for the
fabrication of SiC/SiO$_{x}$ HSL structures with excellent
control over the sublayer composition and thickness. Even
though the SiO$_{x}$ was found to fulfill the requirements
for a matrix material upon high-temperature annealing (Si
precipitation and crystallization, well passivated Si-QDs
exhibiting clear signature of quantum confinement, remaining
[...]},
keywords = {Dissertation (GND)},
cin = {IEK-5},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {121 - Solar cells of the next generation (POF3-121)},
pid = {G:(DE-HGF)POF3-121},
typ = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
url = {https://juser.fz-juelich.de/record/189156},
}