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@PHDTHESIS{Ding:189156,
      author       = {Ding, Kaining},
      title        = {{N}anostructured {S}i-alloys for silicon solar cells},
      volume       = {246},
      school       = {RWTH Aachen},
      type         = {Dr.},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2015-02356},
      isbn         = {978-3-95806-024-1},
      series       = {Schriften des Forschungszentrums Jülich Reihe Energie $\&$
                      Umwelt / Energy $\&$ Environment},
      pages        = {210 S.},
      year         = {2015},
      note         = {RWTH Aachen, Diss., 2014},
      abstract     = {In order to initiate further progress in silicon (Si)
                      photovoltaics, a next-generation of Si solar cell concepts
                      targeting both high performance and low-cost production
                      needs to emerge. The objective of this thesis is to
                      fabricate and characterize Si nanostructures embedded in a
                      Si alloy matrix and implement these novel materials into Si
                      based photovoltaic devices. In particular, silicon quantum
                      dots (Si-QDs) in asilicon carbide (SiC)/Si-rich silicon
                      oxide (SiO$_{x}$) hetero-superlattice (HSL) structure as top
                      cell absorber in all-Si tandem solar cells and nanocomposite
                      microcrystalline silicon oxide ($\mu$c-SiO$_{x}$:H) as
                      contact layers in silicon heterojunction (SHJ) solar cells
                      have been investigated. The main focus of the Si-QD absorber
                      topic lies on the fundamental understanding of the material
                      properties, whereas for the SHJ solar cell topic,
                      developments on device level are the key aspect. Due to the
                      competing nature of charge carrier confinement requiring
                      high band offset and charge carrier transport demanding low
                      band offset between Si-QDs and the embedding material, the
                      choice of different materials for matrix and barrier is
                      indicated. The novel Si-QD absorber approach based on HSL
                      with near-stoichiometric SiC (low band offset) as vertical
                      barrier layer and Si-rich SiO$_{x}$ (high band offset) as
                      lateral matrix layer is motivated by pointing out the
                      technical and theoretical diffculties of Si-QD formation in
                      SiC matrix. After the successful development of laterally
                      uniform, low rate and fully compatible plasma-enhanced
                      chemical vapor depositions of high quality SiC and SiO$_{x}$
                      single layers, the processes were transfered into an
                      automatic deposition sequence, which allows for the
                      fabrication of SiC/SiO$_{x}$ HSL structures with excellent
                      control over the sublayer composition and thickness. Even
                      though the SiO$_{x}$ was found to fulfill the requirements
                      for a matrix material upon high-temperature annealing (Si
                      precipitation and crystallization, well passivated Si-QDs
                      exhibiting clear signature of quantum confinement, remaining
                      [...]},
      keywords     = {Dissertation (GND)},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
      url          = {https://juser.fz-juelich.de/record/189156},
}