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000189243 037__ $$aFZJ-2015-02431
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000189243 1001_ $$0P:(DE-HGF)0$$aYazdi, Sadegh$$b0$$eCorresponding Author
000189243 245__ $$aTowards quantitative electrostatic potential mapping of working semiconductor devices using off-axis electron holography
000189243 260__ $$aAmsterdam$$bElsevier Science$$c2015
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000189243 520__ $$aPronounced improvements in the understanding of semiconductor device performance are expected if electrostatic potential distributions can be measured quantitatively and reliably under working conditions with sufficient sensitivity and spatial resolution. Here, we employ off-axis electron holography to characterize an electrically-biased Si p–n junction by measuring its electrostatic potential, electric field and charge density distributions under working conditions. A comparison between experimental electron holographic phase images and images obtained using three-dimensional electrostatic potential simulations highlights several remaining challenges to quantitative analysis. Our results illustrate how the determination of reliable potential distributions from phase images of electrically biased devices requires electrostatic fringing fields, surface charges, specimen preparation damage and the effects of limited spatial resolution to be taken into account.
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000189243 7001_ $$aKasama, Takeshi$$b1
000189243 7001_ $$aBeleggia, Marco$$b2
000189243 7001_ $$aSamaie Yekta, Maryam$$b3
000189243 7001_ $$aMcComb, David W.$$b4
000189243 7001_ $$aTwitchett-Harrison, Alison C.$$b5
000189243 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b6$$ufzj
000189243 773__ $$0PERI:(DE-600)1479043-9$$a10.1016/j.ultramic.2014.12.012$$gVol. 152, p. 10 - 20$$p10 - 20$$tUltramicroscopy$$v152$$x0304-3991$$y2015
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000189243 9141_ $$y2015
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