% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Yazdi:189243,
      author       = {Yazdi, Sadegh and Kasama, Takeshi and Beleggia, Marco and
                      Samaie Yekta, Maryam and McComb, David W. and
                      Twitchett-Harrison, Alison C. and Dunin-Borkowski, Rafal},
      title        = {{T}owards quantitative electrostatic potential mapping of
                      working semiconductor devices using off-axis electron
                      holography},
      journal      = {Ultramicroscopy},
      volume       = {152},
      issn         = {0304-3991},
      address      = {Amsterdam},
      publisher    = {Elsevier Science},
      reportid     = {FZJ-2015-02431},
      pages        = {10 - 20},
      year         = {2015},
      abstract     = {Pronounced improvements in the understanding of
                      semiconductor device performance are expected if
                      electrostatic potential distributions can be measured
                      quantitatively and reliably under working conditions with
                      sufficient sensitivity and spatial resolution. Here, we
                      employ off-axis electron holography to characterize an
                      electrically-biased Si p–n junction by measuring its
                      electrostatic potential, electric field and charge density
                      distributions under working conditions. A comparison between
                      experimental electron holographic phase images and images
                      obtained using three-dimensional electrostatic potential
                      simulations highlights several remaining challenges to
                      quantitative analysis. Our results illustrate how the
                      determination of reliable potential distributions from phase
                      images of electrically biased devices requires electrostatic
                      fringing fields, surface charges, specimen preparation
                      damage and the effects of limited spatial resolution to be
                      taken into account.},
      cin          = {PGI-5},
      ddc          = {570},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000351945100002},
      pubmed       = {pmid:25576656},
      doi          = {10.1016/j.ultramic.2014.12.012},
      url          = {https://juser.fz-juelich.de/record/189243},
}