%0 Journal Article
%A Schnedler, M.
%A Jiang, Y.
%A Wu, K. H.
%A Wang, E. G.
%A Dunin-Borkowski, Rafal
%A Ebert, Philipp
%T Effective mass of a two-dimensional √3×√3 Ga single atomic layer on Si(111)
%J Surface science
%V 630
%@ 0039-6028
%C Amsterdam
%I Elsevier
%M FZJ-2015-02595
%P 225 - 228
%D 2014
%X The effective mass of the empty conduction band surface state of a single atomic √3 × √3 Ga layer on Si(111) is determined using scanning tunneling spectra. The methodology is based on calculating the tunnel current using its dependence on the effective density of state mass and a parabolic band approximation followed by fitting to the measured tunneling spectra. An effective mass of meff,C = 0.59 ± 0.06 is obtained, in good agreement with a band structure calculation and inverse photo electron spectroscopy data.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000344435900030
%R 10.1016/j.susc.2014.07.024
%U https://juser.fz-juelich.de/record/189428