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000189428 1001_ $$0P:(DE-Juel1)143949$$aSchnedler, M.$$b0$$ufzj
000189428 245__ $$aEffective mass of a two-dimensional √3×√3 Ga single atomic layer on Si(111)
000189428 260__ $$aAmsterdam$$bElsevier$$c2014
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000189428 520__ $$aThe effective mass of the empty conduction band surface state of a single atomic √3 × √3 Ga layer on Si(111) is determined using scanning tunneling spectra. The methodology is based on calculating the tunnel current using its dependence on the effective density of state mass and a parabolic band approximation followed by fitting to the measured tunneling spectra. An effective mass of meff,C = 0.59 ± 0.06 is obtained, in good agreement with a band structure calculation and inverse photo electron spectroscopy data.
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000189428 7001_ $$0P:(DE-HGF)0$$aJiang, Y.$$b1
000189428 7001_ $$0P:(DE-HGF)0$$aWu, K. H.$$b2
000189428 7001_ $$0P:(DE-HGF)0$$aWang, E. G.$$b3
000189428 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b4$$ufzj
000189428 7001_ $$0P:(DE-Juel1)130627$$aEbert, Philipp$$b5$$eCorresponding Author$$ufzj
000189428 773__ $$0PERI:(DE-600)1479030-0$$a10.1016/j.susc.2014.07.024$$gVol. 630, p. 225 - 228$$p225 - 228$$tSurface science$$v630$$x0039-6028$$y2014
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