TY  - JOUR
AU  - Schnedler, M.
AU  - Jiang, Y.
AU  - Wu, K. H.
AU  - Wang, E. G.
AU  - Dunin-Borkowski, Rafal
AU  - Ebert, Philipp
TI  - Effective mass of a two-dimensional √3×√3 Ga single atomic layer on Si(111)
JO  - Surface science
VL  - 630
SN  - 0039-6028
CY  - Amsterdam
PB  - Elsevier
M1  - FZJ-2015-02595
SP  - 225 - 228
PY  - 2014
AB  - The effective mass of the empty conduction band surface state of a single atomic √3 × √3 Ga layer on Si(111) is determined using scanning tunneling spectra. The methodology is based on calculating the tunnel current using its dependence on the effective density of state mass and a parabolic band approximation followed by fitting to the measured tunneling spectra. An effective mass of meff,C = 0.59 ± 0.06 is obtained, in good agreement with a band structure calculation and inverse photo electron spectroscopy data.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000344435900030
DO  - DOI:10.1016/j.susc.2014.07.024
UR  - https://juser.fz-juelich.de/record/189428
ER  -