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| 001 | 189428 | ||
| 005 | 20240610121206.0 | ||
| 024 | 7 | _ | |a 10.1016/j.susc.2014.07.024 |2 doi |
| 024 | 7 | _ | |a 0039-6028 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2015-02595 |
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| 100 | 1 | _ | |a Schnedler, M. |0 P:(DE-Juel1)143949 |b 0 |u fzj |
| 245 | _ | _ | |a Effective mass of a two-dimensional √3×√3 Ga single atomic layer on Si(111) |
| 260 | _ | _ | |a Amsterdam |c 2014 |b Elsevier |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1429076773_26849 |2 PUB:(DE-HGF) |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a The effective mass of the empty conduction band surface state of a single atomic √3 × √3 Ga layer on Si(111) is determined using scanning tunneling spectra. The methodology is based on calculating the tunnel current using its dependence on the effective density of state mass and a parabolic band approximation followed by fitting to the measured tunneling spectra. An effective mass of meff,C = 0.59 ± 0.06 is obtained, in good agreement with a band structure calculation and inverse photo electron spectroscopy data. |
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| 700 | 1 | _ | |a Jiang, Y. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Wu, K. H. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Wang, E. G. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Dunin-Borkowski, Rafal |0 P:(DE-Juel1)144121 |b 4 |u fzj |
| 700 | 1 | _ | |a Ebert, Philipp |0 P:(DE-Juel1)130627 |b 5 |e Corresponding Author |u fzj |
| 773 | _ | _ | |a 10.1016/j.susc.2014.07.024 |g Vol. 630, p. 225 - 228 |0 PERI:(DE-600)1479030-0 |p 225 - 228 |t Surface science |v 630 |y 2014 |x 0039-6028 |
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| 913 | 2 | _ | |a DE-HGF |b Forschungsbereich Energie |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-140 |0 G:(DE-HGF)POF3-143 |2 G:(DE-HGF)POF3-100 |v Controlling Configuration-Based Phenomena |x 0 |
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