%0 Journal Article
%A Tarakina, N. V.
%A Schreyeck, S.
%A Luysberg, M.
%A Grauer, S.
%A Schumacher, C.
%A Karczewski, G.
%A Brunner, K.
%A Gould, C.
%A Buhmann, H.
%A Dunin-Borkowski, Rafal
%A Molenkamp, L. W.
%T Suppressing Twin Formation in Bi $_{2}$ Se $_{3}$ Thin Films
%J Advanced materials interfaces
%V 1
%N 5
%@ 2196-7350
%C Weinheim
%I Wiley-VCH
%M FZJ-2015-02596
%P 8 pp
%D 2014
%X The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete suppression of twin formation in the Bi2Se3 thin films and a perfect interface between the films and their substrates. The only type of structural defect that persists in the twin-free films is an antiphase domain boundary, which is associated with variations in substrate height. We also show that the substrate surface termination influences which family of twin domains dominates.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000348283700021
%R 10.1002/admi.201400134
%U https://juser.fz-juelich.de/record/189429