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000189429 1001_ $$0P:(DE-HGF)0$$aTarakina, N. V.$$b0$$eCorresponding Author
000189429 245__ $$aSuppressing Twin Formation in Bi $_{2}$ Se $_{3}$ Thin Films
000189429 260__ $$aWeinheim$$bWiley-VCH$$c2014
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000189429 520__ $$aThe microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete suppression of twin formation in the Bi2Se3 thin films and a perfect interface between the films and their substrates. The only type of structural defect that persists in the twin-free films is an antiphase domain boundary, which is associated with variations in substrate height. We also show that the substrate surface termination influences which family of twin domains dominates.
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000189429 7001_ $$0P:(DE-HGF)0$$aSchreyeck, S.$$b1
000189429 7001_ $$0P:(DE-Juel1)130811$$aLuysberg, M.$$b2$$ufzj
000189429 7001_ $$0P:(DE-HGF)0$$aGrauer, S.$$b3
000189429 7001_ $$0P:(DE-HGF)0$$aSchumacher, C.$$b4
000189429 7001_ $$0P:(DE-HGF)0$$aKarczewski, G.$$b5
000189429 7001_ $$0P:(DE-HGF)0$$aBrunner, K.$$b6
000189429 7001_ $$0P:(DE-HGF)0$$aGould, C.$$b7
000189429 7001_ $$0P:(DE-HGF)0$$aBuhmann, H.$$b8
000189429 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b9$$ufzj
000189429 7001_ $$0P:(DE-HGF)0$$aMolenkamp, L. W.$$b10
000189429 773__ $$0PERI:(DE-600)2750376-8$$a10.1002/admi.201400134$$gVol. 1, no. 5, p. n/a - n/a$$n5$$p8 pp$$tAdvanced materials interfaces$$v1$$x2196-7350$$y2014
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000189429 9132_ $$0G:(DE-HGF)POF3-143$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$aDE-HGF$$bForschungsbereich Energie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x0
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