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@ARTICLE{Tarakina:189429,
author = {Tarakina, N. V. and Schreyeck, S. and Luysberg, M. and
Grauer, S. and Schumacher, C. and Karczewski, G. and
Brunner, K. and Gould, C. and Buhmann, H. and
Dunin-Borkowski, Rafal and Molenkamp, L. W.},
title = {{S}uppressing {T}win {F}ormation in {B}i $_{2}$ {S}e $_{3}$
{T}hin {F}ilms},
journal = {Advanced materials interfaces},
volume = {1},
number = {5},
issn = {2196-7350},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {FZJ-2015-02596},
pages = {8 pp},
year = {2014},
abstract = {The microstructure of Bi2Se3 topological-insulator thin
films grown by molecular beam epitaxy on InP(111)A and
InP(111)B substrates that have different surface roughnesses
has been studied in detail using X-ray diffraction, X-ray
reflectivity, atomic force microscopy and probe-corrected
scanning transmission electron microscopy. The use of a
rough Fe-doped InP(111)B substrate results in complete
suppression of twin formation in the Bi2Se3 thin films and a
perfect interface between the films and their substrates.
The only type of structural defect that persists in the
twin-free films is an antiphase domain boundary, which is
associated with variations in substrate height. We also show
that the substrate surface termination influences which
family of twin domains dominates.},
cin = {PGI-5},
ddc = {540},
cid = {I:(DE-Juel1)PGI-5-20110106},
pnm = {42G - Peter Grünberg-Centre (PG-C) (POF2-42G41)},
pid = {G:(DE-HGF)POF2-42G41},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000348283700021},
doi = {10.1002/admi.201400134},
url = {https://juser.fz-juelich.de/record/189429},
}