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| 001 | 189429 | ||
| 005 | 20240610121206.0 | ||
| 024 | 7 | _ | |a 10.1002/admi.201400134 |2 doi |
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| 100 | 1 | _ | |a Tarakina, N. V. |0 P:(DE-HGF)0 |b 0 |e Corresponding Author |
| 245 | _ | _ | |a Suppressing Twin Formation in Bi $_{2}$ Se $_{3}$ Thin Films |
| 260 | _ | _ | |a Weinheim |c 2014 |b Wiley-VCH |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete suppression of twin formation in the Bi2Se3 thin films and a perfect interface between the films and their substrates. The only type of structural defect that persists in the twin-free films is an antiphase domain boundary, which is associated with variations in substrate height. We also show that the substrate surface termination influences which family of twin domains dominates. |
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| 700 | 1 | _ | |a Schreyeck, S. |0 P:(DE-HGF)0 |b 1 |
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| 700 | 1 | _ | |a Karczewski, G. |0 P:(DE-HGF)0 |b 5 |
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| 700 | 1 | _ | |a Molenkamp, L. W. |0 P:(DE-HGF)0 |b 10 |
| 773 | _ | _ | |a 10.1002/admi.201400134 |g Vol. 1, no. 5, p. n/a - n/a |0 PERI:(DE-600)2750376-8 |n 5 |p 8 pp |t Advanced materials interfaces |v 1 |y 2014 |x 2196-7350 |
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