TY  - JOUR
AU  - Mikulics, M.
AU  - Hardtdegen, Hilde
AU  - Arango, Yulieth
AU  - Adam, Roman
AU  - Fox, Alfred
AU  - Grützmacher, Detlev
AU  - Gregušová, D.
AU  - Stanček, S.
AU  - Novák, J.
AU  - Kordoš, P.
AU  - Sofer, Z.
AU  - Juul, L.
AU  - Marso, M.
TI  - Reduction of skin effect losses in double-level-T-gate structure
JO  - Applied physics letters
VL  - 105
IS  - 23
SN  - 1077-3118
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2015-02658
SP  - 232102
PY  - 2014
AB  - We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only  standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length Lg¼200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 lm gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of fmax value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000346266000044
DO  - DOI:10.1063/1.4903468
UR  - https://juser.fz-juelich.de/record/189501
ER  -