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@ARTICLE{Mikulics:189501,
      author       = {Mikulics, M. and Hardtdegen, Hilde and Arango, Yulieth and
                      Adam, Roman and Fox, Alfred and Grützmacher, Detlev and
                      Gregušová, D. and Stanček, S. and Novák, J. and Kordoš,
                      P. and Sofer, Z. and Juul, L. and Marso, M.},
      title        = {{R}eduction of skin effect losses in double-level-{T}-gate
                      structure},
      journal      = {Applied physics letters},
      volume       = {105},
      number       = {23},
      issn         = {1077-3118},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2015-02658},
      pages        = {232102},
      year         = {2014},
      abstract     = {We developed a T-gate technology based on selective wet
                      etching yielding 200 nm wide T-gate structures used for
                      fabrication of High Electron Mobility Transistors (HEMT).
                      Major advantages of our process are the use of only standard
                      photolithographic process and the ability to generate T-gate
                      stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate
                      length Lg¼200 nm and double-stacked T-gates exhibits 60 GHz
                      cutoff frequency showing ten-fold improvement compared to 6
                      GHz for the same device with 2 lm gate length. HEMTs with a
                      double-level-T-gate (DLTG) structure exhibit up to $35\%$
                      improvement of fmax value compared to a single T-gate
                      device. This indicates a significant reduction of skin
                      effect losses in DLTG structure compared to its standard
                      T-gate counterpart. These results agree with the theoretical
                      predictions.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {423 - Sensorics and bioinspired systems (POF2-423)},
      pid          = {G:(DE-HGF)POF2-423},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000346266000044},
      doi          = {10.1063/1.4903468},
      url          = {https://juser.fz-juelich.de/record/189501},
}