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024 7 _ |a 10.1063/1.4903468
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024 7 _ |a 1077-3118
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037 _ _ |a FZJ-2015-02658
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100 1 _ |a Mikulics, M.
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245 _ _ |a Reduction of skin effect losses in double-level-T-gate structure
260 _ _ |a Melville, NY
|c 2014
|b American Inst. of Physics
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520 _ _ |a We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length Lg¼200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 lm gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of fmax value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.
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700 1 _ |a Hardtdegen, Hilde
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700 1 _ |a Arango, Yulieth
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700 1 _ |a Adam, Roman
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700 1 _ |a Fox, Alfred
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700 1 _ |a Grützmacher, Detlev
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700 1 _ |a Gregušová, D.
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700 1 _ |a Stanček, S.
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700 1 _ |a Novák, J.
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700 1 _ |a Kordoš, P.
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700 1 _ |a Sofer, Z.
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700 1 _ |a Juul, L.
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700 1 _ |a Marso, M.
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773 _ _ |a 10.1063/1.4903468
|g Vol. 105, no. 23, p. 232102 -
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