%0 Conference Paper
%A Trellenkamp, Stefan
%A Mikulics, Martin
%A Windelen, Jürgen
%A Arango, Yulieth
%A Moers, Jürgen
%A Marso, Michel
%A Grützmacher, Detlev
%A Hardtdegen, Hilde
%T III-nitride nano-LEDs for single photon lithography
%M FZJ-2015-02681
%@ 978-147995474-2
%P 85-88
%D 2014
%X We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano-LEDs depends linearly on the structure size. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long term operation without any indication of degradation effects. This novel technology shows strong potential for a future flexible single photon lithography [1] which is applicable for molecular photonic and electronic circuits.
%B Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
%C 20 Oct 2014 - 22 Oct 2014, Smolenice (Slovakei)
Y2 20 Oct 2014 - 22 Oct 2014
M2 Smolenice, Slovakei
%F PUB:(DE-HGF)8
%9 Contribution to a conference proceedings
%R 10.1109/ASDAM.2014.6998652
%U https://juser.fz-juelich.de/record/189527