000189527 001__ 189527
000189527 005__ 20210129215406.0
000189527 020__ $$a978-147995474-2
000189527 0247_ $$2doi$$a10.1109/ASDAM.2014.6998652
000189527 037__ $$aFZJ-2015-02681
000189527 1001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, Stefan$$b0
000189527 1112_ $$aConference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014$$cSmolenice$$d2014-10-20 - 2014-10-22$$wSlovakei
000189527 245__ $$aIII-nitride nano-LEDs for single photon lithography
000189527 260__ $$c2014
000189527 300__ $$a85-88
000189527 3367_ $$0PUB:(DE-HGF)8$$2PUB:(DE-HGF)$$aContribution to a conference proceedings$$bcontrib$$mcontrib$$s1429537881_28972
000189527 3367_ $$033$$2EndNote$$aConference Paper
000189527 3367_ $$2ORCID$$aCONFERENCE_PAPER
000189527 3367_ $$2DataCite$$aOutput Types/Conference Paper
000189527 3367_ $$2DRIVER$$aconferenceObject
000189527 3367_ $$2BibTeX$$aINPROCEEDINGS
000189527 520__ $$aWe fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano-LEDs depends linearly on the structure size. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long term operation without any indication of degradation effects. This novel technology shows strong potential for a future flexible single photon lithography [1] which is applicable for molecular photonic and electronic circuits.
000189527 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000189527 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b1$$eCorresponding Author$$ufzj
000189527 7001_ $$0P:(DE-Juel1)161161$$aWindelen, Jürgen$$b2
000189527 7001_ $$0P:(DE-Juel1)151156$$aArango, Yulieth$$b3$$ufzj
000189527 7001_ $$0P:(DE-Juel1)128616$$aMoers, Jürgen$$b4$$ufzj
000189527 7001_ $$0P:(DE-HGF)0$$aMarso, Michel$$b5
000189527 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b6$$ufzj
000189527 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b7$$ufzj
000189527 773__ $$a10.1109/ASDAM.2014.6998652
000189527 909CO $$ooai:juser.fz-juelich.de:189527$$pVDB
000189527 9101_ $$0I:(DE-Juel1)PGI-8-PT-20110228$$6P:(DE-Juel1)128856$$aPGI-8-PT$$b0$$k
000189527 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128613$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000189527 9101_ $$0I:(DE-Juel1)ICS-TAK-20111109$$6P:(DE-Juel1)161161$$aTechnische und administrative Infrastruktur - Konstruktion und Werkstatt$$b2$$kICS-TAK
000189527 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)151156$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000189527 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128616$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000189527 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000189527 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125593$$aForschungszentrum Jülich GmbH$$b7$$kFZJ
000189527 9132_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000189527 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000189527 9141_ $$y2014
000189527 920__ $$lyes
000189527 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
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000189527 980__ $$aVDB
000189527 980__ $$aI:(DE-Juel1)PGI-9-20110106
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