TY  - CONF
AU  - Trellenkamp, Stefan
AU  - Mikulics, Martin
AU  - Windelen, Jürgen
AU  - Arango, Yulieth
AU  - Moers, Jürgen
AU  - Marso, Michel
AU  - Grützmacher, Detlev
AU  - Hardtdegen, Hilde
TI  - III-nitride nano-LEDs for single photon lithography
M1  - FZJ-2015-02681
SN  - 978-147995474-2
SP  - 85-88
PY  - 2014
AB  - We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano-LEDs depends linearly on the structure size. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long term operation without any indication of degradation effects. This novel technology shows strong potential for a future flexible single photon lithography [1] which is applicable for molecular photonic and electronic circuits.
T2  - Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
CY  - 20 Oct 2014 - 22 Oct 2014, Smolenice (Slovakei)
Y2  - 20 Oct 2014 - 22 Oct 2014
M2  - Smolenice, Slovakei
LB  - PUB:(DE-HGF)8
DO  - DOI:10.1109/ASDAM.2014.6998652
UR  - https://juser.fz-juelich.de/record/189527
ER  -