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@INPROCEEDINGS{Trellenkamp:189527,
author = {Trellenkamp, Stefan and Mikulics, Martin and Windelen,
Jürgen and Arango, Yulieth and Moers, Jürgen and Marso,
Michel and Grützmacher, Detlev and Hardtdegen, Hilde},
title = {{III}-nitride nano-{LED}s for single photon lithography},
reportid = {FZJ-2015-02681},
isbn = {978-147995474-2},
pages = {85-88},
year = {2014},
abstract = {We fabricated and tested III-nitride
(p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for
operation in the single photon lithography technique. The
band edge luminescence energy of the III-nitride nano-LEDs
depends linearly on the structure size. Our studies provide
clear evidence that our technological process for the
vertically integrated nano-LED emitters is perfectly suited
for long term operation without any indication of
degradation effects. This novel technology shows strong
potential for a future flexible single photon lithography
[1] which is applicable for molecular photonic and
electronic circuits.},
month = {Oct},
date = {2014-10-20},
organization = {Conference Proceedings - 10th
International Conference on Advanced
Semiconductor Devices and Microsystems,
ASDAM 2014, Smolenice (Slovakei), 20
Oct 2014 - 22 Oct 2014},
cin = {PGI-9},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {421 - Frontiers of charge based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)8},
doi = {10.1109/ASDAM.2014.6998652},
url = {https://juser.fz-juelich.de/record/189527},
}