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001     189527
005     20210129215406.0
020 _ _ |a 978-147995474-2
024 7 _ |a 10.1109/ASDAM.2014.6998652
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037 _ _ |a FZJ-2015-02681
100 1 _ |a Trellenkamp, Stefan
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111 2 _ |a Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
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|d 2014-10-20 - 2014-10-22
|w Slovakei
245 _ _ |a III-nitride nano-LEDs for single photon lithography
260 _ _ |c 2014
300 _ _ |a 85-88
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520 _ _ |a We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano-LEDs depends linearly on the structure size. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long term operation without any indication of degradation effects. This novel technology shows strong potential for a future flexible single photon lithography [1] which is applicable for molecular photonic and electronic circuits.
536 _ _ |a 421 - Frontiers of charge based Electronics (POF2-421)
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700 1 _ |a Mikulics, Martin
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700 1 _ |a Windelen, Jürgen
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700 1 _ |a Arango, Yulieth
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700 1 _ |a Moers, Jürgen
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700 1 _ |a Marso, Michel
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700 1 _ |a Grützmacher, Detlev
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700 1 _ |a Hardtdegen, Hilde
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773 _ _ |a 10.1109/ASDAM.2014.6998652
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