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000189539 1001_ $$0P:(DE-HGF)0$$aOtto, Isabel$$b0$$eCorresponding Author
000189539 245__ $$aMicro-pixel light emitting diodes: Impact of the chip process on microscopic electro- and photoluminescence
000189539 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2015
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000189539 520__ $$aWe investigated the influence of a l-pixelated chip process on the photoluminescence (PL) andelectroluminescence (EL) of a monolithic InGaN/GaN based blue light emitting diode with a continuous n-GaN layer. Particularly, we observed the impact of the metallic p-contact on the PL emission wavelength. A PL wavelength shift in the order of 10 nm between contacted and isolated areaswas assigned to screening of internal piezoelectric fields due to charge carrier accumulation. lPLand lEL mappings revealed correlated emission wavelength and intensity inhomogeneities, causedby the epitaxial growth process. The edges of single pixels were investigated in detail via resonantconfocal bias-dependent lPL. No influence on the intensity was observed beyond 300 nm awayfrom the edge, which indicated a good working edge passivation. Due to the low lateral p-GaN conductivity, the lPL intensity was enhanced at isolated areas.
000189539 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000189539 7001_ $$0P:(DE-HGF)0$$aMounir, C.$$b1
000189539 7001_ $$0P:(DE-HGF)0$$aNirschl, A.$$b2
000189539 7001_ $$0P:(DE-HGF)0$$aPfeuffer, A.$$b3
000189539 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, Thomas$$b4
000189539 7001_ $$0P:(DE-HGF)0$$aSchwarz, U. T.$$b5
000189539 7001_ $$0P:(DE-HGF)0$$avon Malm, N.$$b6
000189539 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.4918678$$p151108$$tApplied physics letters$$v106$$x0003-6951$$y2015
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000189539 9130_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen für zukünftige Informationstechnologien$$vFrontiers of charge based Electronics$$x0
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