TY  - JOUR
AU  - Otto, Isabel
AU  - Mounir, C.
AU  - Nirschl, A.
AU  - Pfeuffer, A.
AU  - Schäpers, Thomas
AU  - Schwarz, U. T.
AU  - von Malm, N.
TI  - Micro-pixel light emitting diodes: Impact of the chip process on microscopic electro- and photoluminescence
JO  - Applied physics letters
VL  - 106
SN  - 0003-6951
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2015-02686
SP  - 151108
PY  - 2015
AB  - We investigated the influence of a l-pixelated chip process on the photoluminescence (PL) andelectroluminescence (EL) of a monolithic InGaN/GaN based blue light emitting diode with a continuous n-GaN layer. Particularly, we observed the impact of the metallic p-contact on the PL emission wavelength. A PL wavelength shift in the order of 10 nm between contacted and isolated areaswas assigned to screening of internal piezoelectric fields due to charge carrier accumulation. lPLand lEL mappings revealed correlated emission wavelength and intensity inhomogeneities, causedby the epitaxial growth process. The edges of single pixels were investigated in detail via resonantconfocal bias-dependent lPL. No influence on the intensity was observed beyond 300 nm awayfrom the edge, which indicated a good working edge passivation. Due to the low lateral p-GaN conductivity, the lPL intensity was enhanced at isolated areas.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000353160700008
DO  - DOI:10.1063/1.4918678
UR  - https://juser.fz-juelich.de/record/189539
ER  -