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@ARTICLE{Otto:189539,
      author       = {Otto, Isabel and Mounir, C. and Nirschl, A. and Pfeuffer,
                      A. and Schäpers, Thomas and Schwarz, U. T. and von Malm,
                      N.},
      title        = {{M}icro-pixel light emitting diodes: {I}mpact of the chip
                      process on microscopic electro- and photoluminescence},
      journal      = {Applied physics letters},
      volume       = {106},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2015-02686},
      pages        = {151108},
      year         = {2015},
      abstract     = {We investigated the influence of a l-pixelated chip process
                      on the photoluminescence (PL) andelectroluminescence (EL) of
                      a monolithic InGaN/GaN based blue light emitting diode with
                      a continuous n-GaN layer. Particularly, we observed the
                      impact of the metallic p-contact on the PL emission
                      wavelength. A PL wavelength shift in the order of 10 nm
                      between contacted and isolated areaswas assigned to
                      screening of internal piezoelectric fields due to charge
                      carrier accumulation. lPLand lEL mappings revealed
                      correlated emission wavelength and intensity
                      inhomogeneities, causedby the epitaxial growth process. The
                      edges of single pixels were investigated in detail via
                      resonantconfocal bias-dependent lPL. No influence on the
                      intensity was observed beyond 300 nm awayfrom the edge,
                      which indicated a good working edge passivation. Due to the
                      low lateral p-GaN conductivity, the lPL intensity was
                      enhanced at isolated areas.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000353160700008},
      doi          = {10.1063/1.4918678},
      url          = {https://juser.fz-juelich.de/record/189539},
}