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| 001 | 189539 | ||
| 005 | 20210129215407.0 | ||
| 024 | 7 | _ | |a 10.1063/1.4918678 |2 doi |
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| 037 | _ | _ | |a FZJ-2015-02686 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Otto, Isabel |0 P:(DE-HGF)0 |b 0 |e Corresponding Author |
| 245 | _ | _ | |a Micro-pixel light emitting diodes: Impact of the chip process on microscopic electro- and photoluminescence |
| 260 | _ | _ | |a Melville, NY |c 2015 |b American Inst. of Physics |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a We investigated the influence of a l-pixelated chip process on the photoluminescence (PL) andelectroluminescence (EL) of a monolithic InGaN/GaN based blue light emitting diode with a continuous n-GaN layer. Particularly, we observed the impact of the metallic p-contact on the PL emission wavelength. A PL wavelength shift in the order of 10 nm between contacted and isolated areaswas assigned to screening of internal piezoelectric fields due to charge carrier accumulation. lPLand lEL mappings revealed correlated emission wavelength and intensity inhomogeneities, causedby the epitaxial growth process. The edges of single pixels were investigated in detail via resonantconfocal bias-dependent lPL. No influence on the intensity was observed beyond 300 nm awayfrom the edge, which indicated a good working edge passivation. Due to the low lateral p-GaN conductivity, the lPL intensity was enhanced at isolated areas. |
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| 700 | 1 | _ | |a Mounir, C. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Nirschl, A. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Pfeuffer, A. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Schäpers, Thomas |0 P:(DE-Juel1)128634 |b 4 |
| 700 | 1 | _ | |a Schwarz, U. T. |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a von Malm, N. |0 P:(DE-HGF)0 |b 6 |
| 773 | _ | _ | |a 10.1063/1.4918678 |0 PERI:(DE-600)1469436-0 |p 151108 |t Applied physics letters |v 106 |y 2015 |x 0003-6951 |
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