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000189600 0247_ $$2doi$$a10.1016/j.jcrysgro.2014.10.031
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000189600 1001_ $$0P:(DE-HGF)0$$aŠimek, P.$$b0
000189600 245__ $$aGaN:Co epitaxial layers grown by MOVPE
000189600 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2015
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000189600 520__ $$aWe present a growth of GaN layers doped by cobalt using low pressure metalorganic vapor phase epitaxy on c-plane sapphire substrates. The in situ doping of GaN by Co was performed by the decomposition of bis(cyclopentadienyl)cobalt precursor. Three parameters, the temperature and pressure of the deposition and the Ga/Co ratio in the gas phase, influencing cobalt concentration were investigated. The obtained results were confronted with the thermodynamic predictions of Co solubility within GaN lattice and electronic structure calculations of GaN:Co. The magnetic properties of GaN:Co thin films were investigated using superconducting quantum interference device magnetometer. In addition, the layers were characterized by Raman and photoluminescence spectroscopy and atomic force microscopy. The concentration of Co was measured using electron microprobe and depth profile was measured using secondary ion mass spectroscopy. Room temperature ferromagnetic ordering was observed on the Co doped GaN layers.
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000189600 7001_ $$0P:(DE-HGF)0$$aSedmidubský, D.$$b1
000189600 7001_ $$0P:(DE-HGF)0$$aKlímová, K.$$b2
000189600 7001_ $$0P:(DE-Juel1)128613$$aMikulics, M.$$b3$$ufzj
000189600 7001_ $$0P:(DE-HGF)0$$aMaryško, M.$$b4
000189600 7001_ $$0P:(DE-HGF)0$$aVeselý, M.$$b5
000189600 7001_ $$0P:(DE-HGF)0$$aJurek, K.$$b6
000189600 7001_ $$0P:(DE-HGF)0$$aSofer, Z.$$b7$$eCorresponding Author
000189600 773__ $$0PERI:(DE-600)1466514-1$$a10.1016/j.jcrysgro.2014.10.031$$gVol. 414, p. 62 - 68$$p62 - 68$$tJournal of crystal growth$$v414$$x0022-0248$$y2015
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