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@ARTICLE{imek:189600,
author = {Šimek, P. and Sedmidubský, D. and Klímová, K. and
Mikulics, M. and Maryško, M. and Veselý, M. and Jurek, K.
and Sofer, Z.},
title = {{G}a{N}:{C}o epitaxial layers grown by {MOVPE}},
journal = {Journal of crystal growth},
volume = {414},
issn = {0022-0248},
address = {Amsterdam [u.a.]},
publisher = {Elsevier},
reportid = {FZJ-2015-02737},
pages = {62 - 68},
year = {2015},
abstract = {We present a growth of GaN layers doped by cobalt using low
pressure metalorganic vapor phase epitaxy on c-plane
sapphire substrates. The in situ doping of GaN by Co was
performed by the decomposition of
bis(cyclopentadienyl)cobalt precursor. Three parameters, the
temperature and pressure of the deposition and the Ga/Co
ratio in the gas phase, influencing cobalt concentration
were investigated. The obtained results were confronted with
the thermodynamic predictions of Co solubility within GaN
lattice and electronic structure calculations of GaN:Co. The
magnetic properties of GaN:Co thin films were investigated
using superconducting quantum interference device
magnetometer. In addition, the layers were characterized by
Raman and photoluminescence spectroscopy and atomic force
microscopy. The concentration of Co was measured using
electron microprobe and depth profile was measured using
secondary ion mass spectroscopy. Room temperature
ferromagnetic ordering was observed on the Co doped GaN
layers.},
cin = {PGI-9 / JARA-FIT},
ddc = {540},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {522 - Controlling Spin-Based Phenomena (POF3-522)},
pid = {G:(DE-HGF)POF3-522},
typ = {PUB:(DE-HGF)16 / PUB:(DE-HGF)36},
UT = {WOS:000349602900012},
doi = {10.1016/j.jcrysgro.2014.10.031},
url = {https://juser.fz-juelich.de/record/189600},
}