% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Couto:189755,
      author       = {Couto, Nuno J. G. and Costanzo, Davide and Engels,
                      Stephan and Ki, Dong-Keun and Watanabe, Kenji and Taniguchi,
                      Takashi and Stampfer, Christoph and Guinea, Francisco and
                      Morpurgo, Alberto F.},
      title        = {{R}andom {S}train {F}luctuations as {D}ominant {D}isorder
                      {S}ource for {H}igh-{Q}uality {O}n-{S}ubstrate {G}raphene
                      {D}evices},
      journal      = {Physical review / X},
      volume       = {4},
      number       = {4},
      issn         = {2160-3308},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {FZJ-2015-02785},
      pages        = {041019},
      year         = {2014},
      abstract     = {We perform systematic investigations of transport through
                      graphene on hexagonal boron nitride (hBN) substrates,
                      together with confocal Raman measurements and a targeted
                      theoretical analysis, to identify the dominant source of
                      disorder in this system. Low-temperature transport
                      measurements on many devices reveal a clear correlation
                      between the carrier mobility μ and the width n of the
                      resistance peak around charge neutrality, demonstrating that
                      charge scattering and density inhomogeneities originate from
                      the same microscopic mechanism. The study of weak
                      localization unambiguously shows that this mechanism is
                      associated with a long-ranged disorder potential and
                      provides clear indications that random pseudomagnetic fields
                      due to strain are the dominant scattering source. Spatially
                      resolved Raman spectroscopy measurements confirm the role of
                      local strain fluctuations, since the linewidth of the Raman
                      2D peak—containing information of local strain
                      fluctuations present in graphene—correlates with the value
                      of maximum observed mobility. The importance of strain is
                      corroborated by a theoretical analysis of the relation
                      between μ and n that shows how local strain fluctuations
                      reproduce the experimental data at a quantitative level,
                      with n being determined by the scalar deformation potential
                      and μ by the random pseudomagnetic field (consistently with
                      the conclusion drawn from the analysis of weak
                      localization). Throughout our study, we compare the behavior
                      of devices on hBN substrates to that of devices on SiO2 and
                      SrTiO3, and find that all conclusions drawn for the case of
                      hBN are compatible with the observations made on these other
                      materials. These observations suggest that random strain
                      fluctuations are the dominant source of disorder for
                      high-quality graphene on many different substrates, and not
                      only on hexagonal boron nitride.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000347012200001},
      doi          = {10.1103/PhysRevX.4.041019},
      url          = {https://juser.fz-juelich.de/record/189755},
}