%0 Journal Article
%A Drögeler, Marc
%A Volmer, Frank
%A Wolter, Maik
%A Terrés, Bernat
%A Watanabe, Kenji
%A Taniguchi, Takashi
%A Güntherodt, Gernot
%A Stampfer, Christoph
%A Beschoten, Bernd
%T Nanosecond Spin Lifetimes in Single- and Few-Layer Graphene–hBN Heterostructures at Room Temperature
%J Nano letters
%V 14
%N 11
%@ 1530-6992
%C Washington, DC
%I ACS Publ.
%M FZJ-2015-02787
%P 6050 - 6055
%D 2014
%X We present a new fabrication method of graphene spin-valve devices that yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si++/SiO2. Thereafter, we mechanically transfer a graphene–hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi-, and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10 μm combined with carrier mobilities exceeding 20 000 cm2/(V s).
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000345723800003
%$ pmid:25291305
%R 10.1021/nl501278c
%U https://juser.fz-juelich.de/record/189757