000189757 001__ 189757
000189757 005__ 20210129215431.0
000189757 0247_ $$2doi$$a10.1021/nl501278c
000189757 0247_ $$2ISSN$$a1530-6984
000189757 0247_ $$2ISSN$$a1530-6992
000189757 0247_ $$2WOS$$aWOS:000345723800003
000189757 0247_ $$2altmetric$$aaltmetric:2425122
000189757 0247_ $$2pmid$$apmid:25291305
000189757 0247_ $$2Handle$$a2128/22764
000189757 037__ $$aFZJ-2015-02787
000189757 082__ $$a540
000189757 1001_ $$0P:(DE-HGF)0$$aDrögeler, Marc$$b0
000189757 245__ $$aNanosecond Spin Lifetimes in Single- and Few-Layer Graphene–hBN Heterostructures at Room Temperature
000189757 260__ $$aWashington, DC$$bACS Publ.$$c2014
000189757 3367_ $$2DRIVER$$aarticle
000189757 3367_ $$2DataCite$$aOutput Types/Journal article
000189757 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1430231031_26982
000189757 3367_ $$2BibTeX$$aARTICLE
000189757 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000189757 3367_ $$00$$2EndNote$$aJournal Article
000189757 520__ $$aWe present a new fabrication method of graphene spin-valve devices that yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si++/SiO2. Thereafter, we mechanically transfer a graphene–hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi-, and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10 μm combined with carrier mobilities exceeding 20 000 cm2/(V s).
000189757 536__ $$0G:(DE-HGF)POF2-422$$a422 - Spin-based and quantum information (POF2-422)$$cPOF2-422$$fPOF II$$x0
000189757 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000189757 7001_ $$0P:(DE-HGF)0$$aVolmer, Frank$$b1
000189757 7001_ $$0P:(DE-HGF)0$$aWolter, Maik$$b2
000189757 7001_ $$0P:(DE-HGF)0$$aTerrés, Bernat$$b3
000189757 7001_ $$0P:(DE-HGF)0$$aWatanabe, Kenji$$b4
000189757 7001_ $$0P:(DE-HGF)0$$aTaniguchi, Takashi$$b5
000189757 7001_ $$0P:(DE-HGF)0$$aGüntherodt, Gernot$$b6
000189757 7001_ $$0P:(DE-HGF)0$$aStampfer, Christoph$$b7
000189757 7001_ $$0P:(DE-HGF)0$$aBeschoten, Bernd$$b8$$eCorresponding Author
000189757 773__ $$0PERI:(DE-600)2048866-X$$a10.1021/nl501278c$$gVol. 14, no. 11, p. 6050 - 6055$$n11$$p6050 - 6055$$tNano letters$$v14$$x1530-6992$$y2014
000189757 8564_ $$uhttp://pubs.acs.org/doi/abs/10.1021/nl501278c
000189757 8564_ $$uhttps://juser.fz-juelich.de/record/189757/files/1406.2439.pdf$$yOpenAccess
000189757 8564_ $$uhttps://juser.fz-juelich.de/record/189757/files/nl501278c.pdf$$yOpenAccess
000189757 8564_ $$uhttps://juser.fz-juelich.de/record/189757/files/1406.2439.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000189757 8564_ $$uhttps://juser.fz-juelich.de/record/189757/files/nl501278c.gif?subformat=icon$$xicon$$yOpenAccess
000189757 8564_ $$uhttps://juser.fz-juelich.de/record/189757/files/nl501278c.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000189757 8564_ $$uhttps://juser.fz-juelich.de/record/189757/files/nl501278c.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000189757 8564_ $$uhttps://juser.fz-juelich.de/record/189757/files/nl501278c.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000189757 8564_ $$uhttps://juser.fz-juelich.de/record/189757/files/nl501278c.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000189757 909CO $$ooai:juser.fz-juelich.de:189757$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000189757 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000189757 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)142024$$aForschungszentrum Jülich GmbH$$b7$$kFZJ
000189757 9132_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000189757 9131_ $$0G:(DE-HGF)POF2-422$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vSpin-based and quantum information$$x0
000189757 9141_ $$y2014
000189757 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000189757 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000189757 915__ $$0StatID:(DE-HGF)9910$$2StatID$$aIF >= 10
000189757 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000189757 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000189757 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000189757 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000189757 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000189757 915__ $$0StatID:(DE-HGF)0310$$2StatID$$aDBCoverage$$bNCBI Molecular Biology Database
000189757 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000189757 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000189757 920__ $$lyes
000189757 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000189757 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000189757 980__ $$ajournal
000189757 980__ $$aVDB
000189757 980__ $$aUNRESTRICTED
000189757 980__ $$aI:(DE-Juel1)PGI-9-20110106
000189757 980__ $$aI:(DE-82)080009_20140620
000189757 9801_ $$aFullTexts