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| Hauptseite > Publikationsdatenbank > Nanosecond Spin Lifetimes in Single- and Few-Layer Graphene–hBN Heterostructures at Room Temperature > print |
| Hauptseite > Publikationsdatenbank > Nanosecond Spin Lifetimes in Single- and Few-Layer Graphene–hBN Heterostructures at Room Temperature > print |
| 001 | 189757 | ||
| 005 | 20210129215431.0 | ||
| 024 | 7 | _ | |a 10.1021/nl501278c |2 doi |
| 024 | 7 | _ | |a 1530-6984 |2 ISSN |
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| 100 | 1 | _ | |a Drögeler, Marc |0 P:(DE-HGF)0 |b 0 |
| 245 | _ | _ | |a Nanosecond Spin Lifetimes in Single- and Few-Layer Graphene–hBN Heterostructures at Room Temperature |
| 260 | _ | _ | |a Washington, DC |c 2014 |b ACS Publ. |
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| 520 | _ | _ | |a We present a new fabrication method of graphene spin-valve devices that yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si++/SiO2. Thereafter, we mechanically transfer a graphene–hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi-, and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10 μm combined with carrier mobilities exceeding 20 000 cm2/(V s). |
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| 700 | 1 | _ | |a Volmer, Frank |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Wolter, Maik |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Terrés, Bernat |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Watanabe, Kenji |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Taniguchi, Takashi |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Güntherodt, Gernot |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Stampfer, Christoph |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Beschoten, Bernd |0 P:(DE-HGF)0 |b 8 |e Corresponding Author |
| 773 | _ | _ | |a 10.1021/nl501278c |g Vol. 14, no. 11, p. 6050 - 6055 |0 PERI:(DE-600)2048866-X |n 11 |p 6050 - 6055 |t Nano letters |v 14 |y 2014 |x 1530-6992 |
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