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000189759 1001_ $$0P:(DE-HGF)0$$aEngels, Stephan$$b0$$eCorresponding Author
000189759 245__ $$aImpact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride-9
000189759 260__ $$aWeinheim$$bWiley-VCH$$c2014
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000189759 520__ $$aWe present a thermal annealing study on single-layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Raman spectroscopy measurements before and after each annealing step. While extracted material properties such as charge carrier mobility, overall doping, and strain are not influenced by the annealing, an initial annealing step lowers doping and strain variations and thus results in a more homogeneous sample. Additionally, the narrow 2D-sub-peak widths of the Raman spectrum of BLG, allow us to extract information about strain and doping values from the correlation of the 2D-peak and the G-peak positions.
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000189759 7001_ $$0P:(DE-HGF)0$$aTerrés, Bernat$$b1
000189759 7001_ $$0P:(DE-Juel1)166427$$aKlein, Felix$$b2
000189759 7001_ $$0P:(DE-HGF)0$$aReichardt, Sven$$b3
000189759 7001_ $$0P:(DE-Juel1)165946$$aGoldsche, Matthias$$b4
000189759 7001_ $$0P:(DE-HGF)0$$aKuhlen, Sebastian$$b5
000189759 7001_ $$0P:(DE-HGF)0$$aWatanabe, Kenji$$b6
000189759 7001_ $$0P:(DE-HGF)0$$aTaniguchi, Takashi$$b7
000189759 7001_ $$0P:(DE-HGF)0$$aStampfer, Christoph$$b8
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