TY  - JOUR
AU  - Engels, Stephan
AU  - Terrés, Bernat
AU  - Klein, Felix
AU  - Reichardt, Sven
AU  - Goldsche, Matthias
AU  - Kuhlen, Sebastian
AU  - Watanabe, Kenji
AU  - Taniguchi, Takashi
AU  - Stampfer, Christoph
TI  - Impact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride-9
JO  - Physica status solidi / B
VL  - 251
IS  - 12
SN  - 0370-1972
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2015-02789
SP  - 2545 - 2550
PY  - 2014
AB  - We present a thermal annealing study on single-layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Raman spectroscopy measurements before and after each annealing step. While extracted material properties such as charge carrier mobility, overall doping, and strain are not influenced by the annealing, an initial annealing step lowers doping and strain variations and thus results in a more homogeneous sample. Additionally, the narrow 2D-sub-peak widths of the Raman spectrum of BLG, allow us to extract information about strain and doping values from the correlation of the 2D-peak and the G-peak positions.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000345830900037
DO  - DOI:10.1002/pssb.201451384
UR  - https://juser.fz-juelich.de/record/189759
ER  -