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@ARTICLE{Engels:189759,
author = {Engels, Stephan and Terrés, Bernat and Klein, Felix and
Reichardt, Sven and Goldsche, Matthias and Kuhlen, Sebastian
and Watanabe, Kenji and Taniguchi, Takashi and Stampfer,
Christoph},
title = {{I}mpact of thermal annealing on graphene devices
encapsulated in hexagonal boron nitride-9},
journal = {Physica status solidi / B},
volume = {251},
number = {12},
issn = {0370-1972},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {FZJ-2015-02789},
pages = {2545 - 2550},
year = {2014},
abstract = {We present a thermal annealing study on single-layer and
bilayer (BLG) graphene encapsulated in hexagonal boron
nitride. The samples are characterized by electron transport
and Raman spectroscopy measurements before and after each
annealing step. While extracted material properties such as
charge carrier mobility, overall doping, and strain are not
influenced by the annealing, an initial annealing step
lowers doping and strain variations and thus results in a
more homogeneous sample. Additionally, the narrow
2D-sub-peak widths of the Raman spectrum of BLG, allow us to
extract information about strain and doping values from the
correlation of the 2D-peak and the G-peak positions.},
cin = {PGI-9 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {421 - Frontiers of charge based Electronics (POF2-421) /
HITEC - Helmholtz Interdisciplinary Doctoral Training in
Energy and Climate Research (HITEC) (HITEC-20170406)},
pid = {G:(DE-HGF)POF2-421 / G:(DE-Juel1)HITEC-20170406},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000345830900037},
doi = {10.1002/pssb.201451384},
url = {https://juser.fz-juelich.de/record/189759},
}