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@ARTICLE{Engels:189759,
      author       = {Engels, Stephan and Terrés, Bernat and Klein, Felix and
                      Reichardt, Sven and Goldsche, Matthias and Kuhlen, Sebastian
                      and Watanabe, Kenji and Taniguchi, Takashi and Stampfer,
                      Christoph},
      title        = {{I}mpact of thermal annealing on graphene devices
                      encapsulated in hexagonal boron nitride-9},
      journal      = {Physica status solidi / B},
      volume       = {251},
      number       = {12},
      issn         = {0370-1972},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2015-02789},
      pages        = {2545 - 2550},
      year         = {2014},
      abstract     = {We present a thermal annealing study on single-layer and
                      bilayer (BLG) graphene encapsulated in hexagonal boron
                      nitride. The samples are characterized by electron transport
                      and Raman spectroscopy measurements before and after each
                      annealing step. While extracted material properties such as
                      charge carrier mobility, overall doping, and strain are not
                      influenced by the annealing, an initial annealing step
                      lowers doping and strain variations and thus results in a
                      more homogeneous sample. Additionally, the narrow
                      2D-sub-peak widths of the Raman spectrum of BLG, allow us to
                      extract information about strain and doping values from the
                      correlation of the 2D-peak and the G-peak positions.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421) /
                      HITEC - Helmholtz Interdisciplinary Doctoral Training in
                      Energy and Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF2-421 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000345830900037},
      doi          = {10.1002/pssb.201451384},
      url          = {https://juser.fz-juelich.de/record/189759},
}