TY  - JOUR
AU  - Epping, A.
AU  - Engels, S.
AU  - Volk, C.
AU  - Watanabe, K.
AU  - Taniguchi, T.
AU  - Trellenkamp, S.
AU  - Stampfer, C.
TI  - Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields
JO  - Physica status solidi / B
VL  - 250
IS  - 12
SN  - 0370-1972
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2015-02797
SP  - 2692 - 2696
PY  - 2013
AB  - We report on the fabrication and electrical characterization of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magnetic fields. The electronic transport measurements show a slight improvement compared to graphene SETs on SiO2. In particular, SETs on hBN are more stable under the influence of perpendicular magnetic fields up to 9 T in contrast to measurements reported on SETs on SiO2. This result indicates a reduced surface disorder potential in SETs on hBN, which might be an important step toward clean and more controllable graphene quantum dots (QDs).
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000328325900036
DO  - DOI:10.1002/pssb.201300295
UR  - https://juser.fz-juelich.de/record/189767
ER  -