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@ARTICLE{Epping:189767,
author = {Epping, A. and Engels, S. and Volk, C. and Watanabe, K. and
Taniguchi, T. and Trellenkamp, S. and Stampfer, C.},
title = {{E}tched graphene single electron transistors on hexagonal
boron nitride in high magnetic fields},
journal = {Physica status solidi / B},
volume = {250},
number = {12},
issn = {0370-1972},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {FZJ-2015-02797},
pages = {2692 - 2696},
year = {2013},
abstract = {We report on the fabrication and electrical
characterization of etched graphene single electron
transistors (SETs) of various sizes on hexagonal boron
nitride (hBN) in high magnetic fields. The electronic
transport measurements show a slight improvement compared to
graphene SETs on SiO2. In particular, SETs on hBN are more
stable under the influence of perpendicular magnetic fields
up to 9 T in contrast to measurements reported on SETs on
SiO2. This result indicates a reduced surface disorder
potential in SETs on hBN, which might be an important step
toward clean and more controllable graphene quantum dots
(QDs).},
cin = {PGI-9 / JARA-FIT / PGI-8-PT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
I:(DE-Juel1)PGI-8-PT-20110228},
pnm = {421 - Frontiers of charge based Electronics (POF2-421) /
423 - Sensorics and bioinspired systems (POF2-423)},
pid = {G:(DE-HGF)POF2-421 / G:(DE-HGF)POF2-423},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000328325900036},
doi = {10.1002/pssb.201300295},
url = {https://juser.fz-juelich.de/record/189767},
}