Hauptseite > Publikationsdatenbank > Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields > print

001     189767
005     20210129215433.0
024 7 _ |2 doi
|a 10.1002/pssb.201300295
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024 7 _ |2 ISSN
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100 1 _ |0 P:(DE-Juel1)145909
|a Epping, A.
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245 _ _ |a Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields
260 _ _ |a Weinheim
|b Wiley-VCH
|c 2013
336 7 _ |a Journal Article
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520 _ _ |a We report on the fabrication and electrical characterization of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magnetic fields. The electronic transport measurements show a slight improvement compared to graphene SETs on SiO2. In particular, SETs on hBN are more stable under the influence of perpendicular magnetic fields up to 9 T in contrast to measurements reported on SETs on SiO2. This result indicates a reduced surface disorder potential in SETs on hBN, which might be an important step toward clean and more controllable graphene quantum dots (QDs).
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|a 10.1002/pssb.201300295
|g Vol. 250, no. 12, p. 2692 - 2696
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|t Physica status solidi / B
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|x 0370-1972
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