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@ARTICLE{Forster:189770,
      author       = {Forster, F. and Molina-Sanchez, A. and Engels, S. and
                      Epping, A. and Watanabe, K. and Taniguchi, T. and Wirtz, L.
                      and Stampfer, C.},
      title        = {{D}ielectric screening of the {K}ohn anomaly of graphene on
                      hexagonal boron nitride},
      journal      = {Physical review / B},
      volume       = {88},
      number       = {8},
      issn         = {1098-0121},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {FZJ-2015-02800},
      pages        = {085419},
      year         = {2013},
      abstract     = {Kohn anomalies in three-dimensional metallic crystals are
                      dips in the phonon dispersion that are caused by abrupt
                      changes in the screening of the ion cores by the surrounding
                      electron gas. These anomalies are also present at the
                      high-symmetry points Γ and K in the phonon dispersion of
                      two-dimensional graphene, where the phonon wave vector
                      connects two points on the Fermi surface. The linear slope
                      around the kinks in the highest optical branch is
                      proportional to the electron-phonon coupling. Here, we
                      present a combined theoretical and experimental study of the
                      influence of the dielectric substrate on the vibrational
                      properties of graphene. We show that screening by the
                      dielectric substrate reduces the electron-phonon coupling at
                      the high-symmetry point K and leads to an upshift of the
                      Raman 2D line. This results in the observation of a Kohn
                      anomaly that can be tuned by screening. The exact position
                      of the 2D line can thus be taken also as a signature for
                      changes in the (electron-phonon limited) conductivity of
                      graphene.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000323155100005},
      doi          = {10.1103/PhysRevB.88.085419},
      url          = {https://juser.fz-juelich.de/record/189770},
}