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@ARTICLE{Ahl:189772,
      author       = {Ahl, J.-P. and Hertkorn, J. and Koch, H and Galler, B. and
                      Michel, B. and Binder, M. and Holländer, B.},
      title        = {{M}orphology, growth mode and indium incorporation of
                      {MOVPE} grown {I}n{G}a{N} and {A}l{I}n{G}a{N}: {A}
                      comparison},
      journal      = {Journal of crystal growth},
      volume       = {398},
      issn         = {0022-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2015-02802},
      pages        = {33 - 39},
      year         = {2014},
      abstract     = {We compared InGaN- and AlInGaN-layers grown by
                      metal-organic vapor phase epitaxy (MOVPE) in terms of
                      morphology, growth mode and indium incorporation. The growth
                      parameters of the AlInGaN layers only differed from InGaN
                      growth by an additional trimethylaluminum (TMAl) flow.
                      Rutherford backscattering spectrometry (RBS) and X-ray
                      photoelectron spectroscopy (XPS) measurements showed that
                      the indium incorporation in AlInGaN was significantly
                      increased compared to InGaN. Atomic force microscopy (AFM)
                      was used to analyze the morphology and the growth mode. The
                      additional TMAl flow changed the growth mode from a
                      step-flow mode to a 2-dimensional (2D) island nucleation
                      mode, yielding a smoother layer morphology. This behavior
                      can be explained by the low surface mobility of the Al
                      adatoms and their nucleation on terraces between adjacent
                      steps. Step bunching – as observed for InGaN – was
                      avoided during AlInGaN growth. This reduced the AFM root
                      mean square roughness by $40\%$ compared to InGaN. Possible
                      impacts on charge carrier localization in QWs are
                      discussed.},
      cin          = {PGI-9},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000336430900006},
      doi          = {10.1016/j.jcrysgro.2014.03.043},
      url          = {https://juser.fz-juelich.de/record/189772},
}