000189773 001__ 189773
000189773 005__ 20210129215434.0
000189773 0247_ $$2doi$$a10.1016/j.tsf.2013.10.078
000189773 0247_ $$2ISSN$$a0040-6090
000189773 0247_ $$2ISSN$$a1879-2731
000189773 0247_ $$2WOS$$aWOS:000333968300038
000189773 0247_ $$2altmetric$$aaltmetric:21825806
000189773 037__ $$aFZJ-2015-02803
000189773 082__ $$a070
000189773 1001_ $$0P:(DE-Juel1)138778$$aWirths, S.$$b0$$eCorresponding Author
000189773 245__ $$aSiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications
000189773 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2014
000189773 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1435674413_745
000189773 3367_ $$2DataCite$$aOutput Types/Journal article
000189773 3367_ $$00$$2EndNote$$aJournal Article
000189773 3367_ $$2BibTeX$$aARTICLE
000189773 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000189773 3367_ $$2DRIVER$$aarticle
000189773 520__ $$aIn this contribution, we propose a laser concept based on a double heterostructure consisting of tensile strained Ge as the active medium and SiGeSn ternaries as cladding layers. Electronic band-structure calculations were used to determine the Si and Sn concentrations yielding a type I heterostructure with appropriate band-offsets (50 meV) between strained Ge and SiGeSn. Reduced pressure chemical vapor deposition system was employed to study the laser structure growth. Detailed analyses regarding layer composition, crystal quality, surface morphology and elastic strain are presented. A strong temperature dependence of the Si and Sn incorporation has been obtained, ranging from 4 to 19 at.% Si and from 4 to 12 at.% Sn (growth temperatures between 350 °C and 475 °C). The high single crystalline quality and low surface roughness of 0.5–0.75 nm demonstrate that our layers are suitable for heterostructure laser fabrication.
000189773 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000189773 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000189773 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b1$$eCorresponding Author
000189773 7001_ $$0P:(DE-HGF)0$$aIkonic, Z.$$b2
000189773 7001_ $$0P:(DE-HGF)0$$aHarrison, P.$$b3
000189773 7001_ $$0P:(DE-Juel1)128639$$aTiedemann, Andreas$$b4
000189773 7001_ $$0P:(DE-Juel1)125595$$aHolländer, B.$$b5
000189773 7001_ $$0P:(DE-Juel1)128637$$aStoica, T.$$b6
000189773 7001_ $$0P:(DE-Juel1)128617$$aMussler, G.$$b7
000189773 7001_ $$0P:(DE-Juel1)133840$$aBreuer, Uwe$$b8
000189773 7001_ $$0P:(DE-HGF)0$$aHartmann, J. M.$$b9
000189773 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, D.$$b10
000189773 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b11
000189773 773__ $$0PERI:(DE-600)1482896-0$$a10.1016/j.tsf.2013.10.078$$gVol. 557, p. 183 - 187$$p183 - 187$$tThin solid films$$v557$$x0040-6090$$y2014
000189773 8564_ $$uhttp://www.sciencedirect.com/science/article/pii/S0040609013016891
000189773 8564_ $$uhttps://juser.fz-juelich.de/record/189773/files/1-s2.0-S0040609013016891-main.pdf$$yRestricted
000189773 8564_ $$uhttps://juser.fz-juelich.de/record/189773/files/1-s2.0-S0040609013016891-main.gif?subformat=icon$$xicon$$yRestricted
000189773 8564_ $$uhttps://juser.fz-juelich.de/record/189773/files/1-s2.0-S0040609013016891-main.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000189773 8564_ $$uhttps://juser.fz-juelich.de/record/189773/files/1-s2.0-S0040609013016891-main.jpg?subformat=icon-180$$xicon-180$$yRestricted
000189773 8564_ $$uhttps://juser.fz-juelich.de/record/189773/files/1-s2.0-S0040609013016891-main.jpg?subformat=icon-640$$xicon-640$$yRestricted
000189773 8564_ $$uhttps://juser.fz-juelich.de/record/189773/files/1-s2.0-S0040609013016891-main.pdf?subformat=pdfa$$xpdfa$$yRestricted
000189773 909CO $$ooai:juser.fz-juelich.de:189773$$pVDB
000189773 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)138778$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000189773 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000189773 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128639$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000189773 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125595$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000189773 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128637$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000189773 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128617$$aForschungszentrum Jülich GmbH$$b7$$kFZJ
000189773 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)133840$$aForschungszentrum Jülich GmbH$$b8$$kFZJ
000189773 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich GmbH$$b10$$kFZJ
000189773 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128609$$aForschungszentrum Jülich GmbH$$b11$$kFZJ
000189773 9132_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000189773 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000189773 9141_ $$y2014
000189773 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000189773 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000189773 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000189773 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000189773 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000189773 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000189773 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000189773 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000189773 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000189773 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF <  5
000189773 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000189773 9201_ $$0I:(DE-Juel1)ZEA-3-20090406$$kZEA-3$$lAnalytik$$x1
000189773 980__ $$ajournal
000189773 980__ $$aVDB
000189773 980__ $$aI:(DE-Juel1)PGI-9-20110106
000189773 980__ $$aI:(DE-Juel1)ZEA-3-20090406
000189773 980__ $$aUNRESTRICTED
000189773 981__ $$aI:(DE-Juel1)ZEA-3-20090406