TY  - JOUR
AU  - Wirths, S.
AU  - Buca, D.
AU  - Ikonic, Z.
AU  - Harrison, P.
AU  - Tiedemann, Andreas
AU  - Holländer, B.
AU  - Stoica, T.
AU  - Mussler, G.
AU  - Breuer, Uwe
AU  - Hartmann, J. M.
AU  - Grützmacher, D.
AU  - Mantl, S.
TI  - SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications
JO  - Thin solid films
VL  - 557
SN  - 0040-6090
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - FZJ-2015-02803
SP  - 183 - 187
PY  - 2014
AB  - In this contribution, we propose a laser concept based on a double heterostructure consisting of tensile strained Ge as the active medium and SiGeSn ternaries as cladding layers. Electronic band-structure calculations were used to determine the Si and Sn concentrations yielding a type I heterostructure with appropriate band-offsets (50 meV) between strained Ge and SiGeSn. Reduced pressure chemical vapor deposition system was employed to study the laser structure growth. Detailed analyses regarding layer composition, crystal quality, surface morphology and elastic strain are presented. A strong temperature dependence of the Si and Sn incorporation has been obtained, ranging from 4 to 19 at.% Si and from 4 to 12 at.% Sn (growth temperatures between 350 °C and 475 °C). The high single crystalline quality and low surface roughness of 0.5–0.75 nm demonstrate that our layers are suitable for heterostructure laser fabrication.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000333968300038
DO  - DOI:10.1016/j.tsf.2013.10.078
UR  - https://juser.fz-juelich.de/record/189773
ER  -