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@ARTICLE{Wirths:189773,
      author       = {Wirths, S. and Buca, D. and Ikonic, Z. and Harrison, P. and
                      Tiedemann, Andreas and Holländer, B. and Stoica, T. and
                      Mussler, G. and Breuer, Uwe and Hartmann, J. M. and
                      Grützmacher, D. and Mantl, S.},
      title        = {{S}i{G}e{S}n growth studies using reduced pressure chemical
                      vapor deposition towards optoelectronic applications},
      journal      = {Thin solid films},
      volume       = {557},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2015-02803},
      pages        = {183 - 187},
      year         = {2014},
      abstract     = {In this contribution, we propose a laser concept based on a
                      double heterostructure consisting of tensile strained Ge as
                      the active medium and SiGeSn ternaries as cladding layers.
                      Electronic band-structure calculations were used to
                      determine the Si and Sn concentrations yielding a type I
                      heterostructure with appropriate band-offsets (50 meV)
                      between strained Ge and SiGeSn. Reduced pressure chemical
                      vapor deposition system was employed to study the laser
                      structure growth. Detailed analyses regarding layer
                      composition, crystal quality, surface morphology and elastic
                      strain are presented. A strong temperature dependence of the
                      Si and Sn incorporation has been obtained, ranging from 4 to
                      19 $at.\%$ Si and from 4 to 12 $at.\%$ Sn (growth
                      temperatures between 350 °C and 475 °C). The high single
                      crystalline quality and low surface roughness of 0.5–0.75
                      nm demonstrate that our layers are suitable for
                      heterostructure laser fabrication.},
      cin          = {PGI-9 / ZEA-3},
      ddc          = {070},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)ZEA-3-20090406},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000333968300038},
      doi          = {10.1016/j.tsf.2013.10.078},
      url          = {https://juser.fz-juelich.de/record/189773},
}