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000189775 1001_ $$0P:(DE-HGF)0$$aLeichtweiss, Thomas$$b0
000189775 245__ $$aAmorphous and highly nonstoichiometric titania (TiOx) thin films close to metal-like conductivity
000189775 260__ $$aLondon {[u.a.]$$bRSC$$c2014
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000189775 520__ $$aOxygen-deficient titanium oxide films (TiOx) have been prepared by pulsed laser deposition at room temperature. Samples in their as-deposited state have an average composition of TiO1.6, are optically absorbing and show electronic conductivities in the range of 10 S cm−1. The films are metastable and consist of grains of cubic titanium monoxide (γ-TiO) embedded in an amorphous TiO1.77 matrix. Upon annealing in an argon atmosphere the electrical conductivity of the films increases and comes close to metal-like conductivity (1000 S cm−1) at about 450 °C whereas the local structure is changed: nanocrystalline grains of metallic Ti are formed in the amorphous matrix due to an internal solid state disproportionation. The highly conductive state can be frozen by quenching. During heat treatment in an argon atmosphere a stoichiometric rutile TiO2 surface layer forms due to oxidation by residual oxygen. The combination of a highly conductive TiOx film with such an approximately 20 nm thick rutile cover layer leads to a surprisingly high efficiency for the water-splitting reaction without the application of an external potential.
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000189775 7001_ $$0P:(DE-HGF)0$$aHenning, Ralph A.$$b1
000189775 7001_ $$0P:(DE-HGF)0$$aKoettgen, Julius$$b2
000189775 7001_ $$0P:(DE-HGF)0$$aSchmidt, Rüdiger M.$$b3
000189775 7001_ $$0P:(DE-Juel1)125595$$aHolländer, Bernhard$$b4
000189775 7001_ $$0P:(DE-HGF)0$$aMartin, Manfred$$b5
000189775 7001_ $$0P:(DE-HGF)0$$aWuttig, Matthias$$b6
000189775 7001_ $$0P:(DE-HGF)0$$aJanek, Jürgen$$b7$$eCorresponding Author
000189775 773__ $$0PERI:(DE-600)2702232-8$$a10.1039/c3ta14816e$$gVol. 2, no. 18, p. 6631 -$$n18$$p6631-6640$$tJournal of materials chemistry / A$$v2$$x2050-7496$$y2014
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000189775 9132_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
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