Home > Publications database > Amorphous and highly nonstoichiometric titania (TiOx) thin films close to metal-like conductivity > print

001     189775
005     20210129215435.0
024 7 _ |a 10.1039/c3ta14816e
|2 doi
024 7 _ |a 2050-7488
|2 ISSN
024 7 _ |a 2050-7496
|2 ISSN
024 7 _ |a WOS:000334123100048
|2 WOS
024 7 _ |a 2128/8554
|2 Handle
024 7 _ |a altmetric:21825808
|2 altmetric
037 _ _ |a FZJ-2015-02805
082 _ _ |a 540
100 1 _ |a Leichtweiss, Thomas
|0 P:(DE-HGF)0
|b 0
245 _ _ |a Amorphous and highly nonstoichiometric titania (TiOx) thin films close to metal-like conductivity
260 _ _ |a London {[u.a.]
|c 2014
|b RSC
336 7 _ |a Journal Article
|b journal
|m journal
|0 PUB:(DE-HGF)16
|s 1430374288_14055
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
520 _ _ |a Oxygen-deficient titanium oxide films (TiOx) have been prepared by pulsed laser deposition at room temperature. Samples in their as-deposited state have an average composition of TiO1.6, are optically absorbing and show electronic conductivities in the range of 10 S cm−1. The films are metastable and consist of grains of cubic titanium monoxide (γ-TiO) embedded in an amorphous TiO1.77 matrix. Upon annealing in an argon atmosphere the electrical conductivity of the films increases and comes close to metal-like conductivity (1000 S cm−1) at about 450 °C whereas the local structure is changed: nanocrystalline grains of metallic Ti are formed in the amorphous matrix due to an internal solid state disproportionation. The highly conductive state can be frozen by quenching. During heat treatment in an argon atmosphere a stoichiometric rutile TiO2 surface layer forms due to oxidation by residual oxygen. The combination of a highly conductive TiOx film with such an approximately 20 nm thick rutile cover layer leads to a surprisingly high efficiency for the water-splitting reaction without the application of an external potential.
536 _ _ |a 421 - Frontiers of charge based Electronics (POF2-421)
|0 G:(DE-HGF)POF2-421
|c POF2-421
|f POF II
|x 0
588 _ _ |a Dataset connected to CrossRef, juser.fz-juelich.de
700 1 _ |a Henning, Ralph A.
|0 P:(DE-HGF)0
|b 1
700 1 _ |a Koettgen, Julius
|0 P:(DE-HGF)0
|b 2
700 1 _ |a Schmidt, Rüdiger M.
|0 P:(DE-HGF)0
|b 3
700 1 _ |a Holländer, Bernhard
|0 P:(DE-Juel1)125595
|b 4
700 1 _ |a Martin, Manfred
|0 P:(DE-HGF)0
|b 5
700 1 _ |a Wuttig, Matthias
|0 P:(DE-HGF)0
|b 6
700 1 _ |a Janek, Jürgen
|0 P:(DE-HGF)0
|b 7
|e Corresponding Author
773 _ _ |a 10.1039/c3ta14816e
|g Vol. 2, no. 18, p. 6631 -
|0 PERI:(DE-600)2702232-8
|n 18
|p 6631-6640
|t Journal of materials chemistry / A
|v 2
|y 2014
|x 2050-7496
856 4 _ |u http://pubs.rsc.org/en/Content/ArticleLanding/2014/TA/c3ta14816e#!divAbstract
856 4 _ |u https://juser.fz-juelich.de/record/189775/files/c3ta14816e.pdf
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/189775/files/c3ta14816e.gif?subformat=icon
|x icon
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/189775/files/c3ta14816e.jpg?subformat=icon-1440
|x icon-1440
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/189775/files/c3ta14816e.jpg?subformat=icon-180
|x icon-180
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/189775/files/c3ta14816e.jpg?subformat=icon-640
|x icon-640
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/189775/files/c3ta14816e.pdf?subformat=pdfa
|x pdfa
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/189775/files/c3ta14816e.jpg?subformat=icon-144
|x icon-144
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:189775
|p openaire
|p open_access
|p driver
|p VDB
|p dnbdelivery
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 4
|6 P:(DE-Juel1)125595
913 2 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-521
|2 G:(DE-HGF)POF3-500
|v Controlling Electron Charge-Based Phenomena
|x 0
913 1 _ |a DE-HGF
|b Schlüsseltechnologien
|1 G:(DE-HGF)POF2-420
|0 G:(DE-HGF)POF2-421
|2 G:(DE-HGF)POF2-400
|v Frontiers of charge based Electronics
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF2
|l Grundlagen zukünftiger Informationstechnologien
914 1 _ |y 2014
915 _ _ |a Creative Commons Attribution CC BY 3.0
|0 LIC:(DE-HGF)CCBY3
|2 HGFVOC
915 _ _ |a JCR
|0 StatID:(DE-HGF)0100
|2 StatID
915 _ _ |a WoS
|0 StatID:(DE-HGF)0110
|2 StatID
|b Science Citation Index
915 _ _ |a WoS
|0 StatID:(DE-HGF)0111
|2 StatID
|b Science Citation Index Expanded
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0150
|2 StatID
|b Web of Science Core Collection
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0199
|2 StatID
|b Thomson Reuters Master Journal List
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0300
|2 StatID
|b Medline
915 _ _ |a OpenAccess
|0 StatID:(DE-HGF)0510
|2 StatID
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1150
|2 StatID
|b Current Contents - Physical, Chemical and Earth Sciences
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1160
|2 StatID
|b Current Contents - Engineering, Computing and Technology
915 _ _ |a IF < 5
|0 StatID:(DE-HGF)9900
|2 StatID
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l JARA-FIT
|x 1
980 1 _ |a FullTexts
980 _ _ |a journal
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a FullTexts
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a I:(DE-82)080009_20140620

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21